Gunasekaran, S (2021) Characterization of jet nebulizer spray pyrolysis coated MoS2 thin films and fabrication of p-Si/n-MoS2 junction diodes for optoelectronic application. Inorganic Chemistry Communications.

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Abstract

Inorganic two-dimensional materials are gradually becoming resources for modern
electronic device manufacturing. Fascinate of 2D transition metal dicholgonides (TMDs) are
particularly high. TMDS are very great potential for their characteristics and band gap
structure in optoelectronic devices. In TMDs, 2D MoS2 is most researchable material due to
its good performance and its adequacy of electronic and optoelectronic application. Here we
demonstrate MoS2 thin film for various temperature such as 400, 450, 500, 550°C via Jet Nebulizer Spray Pyrolysis (JNSP) technique for PN diode application. XRD pattern revealed
that the polycrystalline nature of MoS2 films with hexagonal crystal structure. The elongated
irregular rod-like structures were revealed through FESEM. Elemental confirmation studies
of Mo and S were done through EDX. The MoS2 films deposited at 550°C exhibit minimum
band gap. The average conductivity values were found to be increased from 1.730×10−8 to
3.877×10−7 S/cm with substrate temperature. A positive photo conducting-nature of p-Si/nMoS2 diode have been fabricated. Remarkably, the p-Si/n-MoS2 diode fabricated at 550 ºC
revealed minimum n values of 2.23.

Item Type: Article
Uncontrolled Keywords: MoS2 thin films; P-N junction diode; spray pyrolysis; I-V characterization
Divisions: PSG College of Arts and Science > Department of Physics
Depositing User: Mr Team Mosys
Date Deposited: 16 Aug 2022 09:27
Last Modified: 16 Aug 2022 09:27
URI: http://ir.psgcas.ac.in/id/eprint/1473

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