Venkat, Subramaniam and Jagadeesan, V (2022) Comparison studies of Zn-doped CuO thin films deposited by manual and automated nebulizer-spray pyrolysis systems and their application in heterojunction-diode fabrication. Journal of Sol-Gel Science and Technology. pp. 614-627.
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Abstract
This paper reports on the development of an automated nebulizer-spray pyrolysis (NSP) system and comparison studies of zinc-doped copper oxide with doping concentrations of 1%, 3%, and 5% deposited by manual and automated nebulizer-spray pyrolysis (NSP) systems for heterojunction-diode applications. The structural, optical, morphological, and electrical properties of the prepared manual and automated CuO:Zn thin films were compared. X-ray diffractometry (XRD) studies revealed that all
the manual and automated CuO:Zn thin films have monoclinic structure. The crystallite size of the films has been calculated using Scherrer’s formula. Field-emission scanning electron microscope (FESEM) images revealed spherical-shaped small grains in the automated CuO:Zn thin films, while agglomerated particles are observed in the manual CuO:Zn thin films. The highest optical absorbance and lowest optical band gap values were recorded using UV–Vis spectrophotometry. The opticalband gap value increases when the doping with Zn increases beyond 3%. The maximum electrical conductivity of manual and automated CuO:Zn thin films was recorded using an electrometer. Based on the results obtained from these characterization
studies, p-type (3% CuO:Zn thin film) and n-type (silico wafer) samples prepared using the manual and automated NSP
systems were used to fabricate Ag/p-CuO:Zn/n-Si heterojunction diodes, which were studied under dark and light conditions.
The investigation results reveal that the heterojunction diode fabricated using the automated NSP system has a lower ideality
factor and barrier height compared with the heterojunction diode prepared using the manual NSP system.
| Item Type: | Article |
|---|---|
| Uncontrolled Keywords: | Nebulizer-spray pyrolysis Microcontroller CuO:Zn thin film Ag/p-CuO:Zn/n-Si heterojuction diode Barrier height Ideality factor |
| Divisions: | PSG College of Arts and Science > Department of Electronics |
| Depositing User: | Mr Team Mosys |
| Date Deposited: | 14 Mar 2023 06:49 |
| Last Modified: | 14 Mar 2023 06:49 |
| URI: | http://ir.psgcas.ac.in/id/eprint/1765 |
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